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base-emitter breakdown

См. также в других словарях:

  • Differential amplifier — symbol The inverting and non inverting inputs are distinguished by − and + symbols (respectively) placed in the amplifier triangle. Vs+ and Vs− are the power supply voltages; they are often omitted from the diagram for simplicity, but of course… …   Wikipedia

  • 2N2222 — The 2N2222, often referred to as the quad two transistor, is a small, common NPN BJT transistor used for general purpose low power amplifying or switching applications. It is designed for low to medium current, low power, medium voltage, and can… …   Wikipedia

  • Avalanche transistor — An Avalanche Transistor is a bipolar junction transistor designed for operation in the region of its collector current/collector to emitter voltage characteristics beyond the collector to emitter breakdown voltage, called avalanche breakdown… …   Wikipedia

  • Bipolar junction transistor — BJT redirects here. For the Japanese language proficiency test, see Business Japanese Proficiency Test. PNP …   Wikipedia

  • Current source — Figure 1: An ideal current source, I, driving a resistor, R, and creating a voltage V A current source is an electrical or electronic device that delivers or absorbs electric current. A current source is the dual of a voltage source. The term… …   Wikipedia

  • Operational amplifier — A Signetics μa741 operational amplifier, one of the most successful op amps. An operational amplifier ( op amp ) is a DC coupled high gain electronic voltage amplifier with a differential input and, usually, a single ended output.[1] An op amp… …   Wikipedia

  • Multivibrator — A multivibrator is an electronic circuit used to implement a variety of simple two state systems such as oscillators, timers and flip flops. It is characterized by two amplifying devices (transistors, electron tubes or other devices) cross… …   Wikipedia

  • Semiconductor device — Semiconductor devices are electronic components that exploit the electronic properties of semiconductor materials, principally silicon, germanium, and gallium arsenide. Semiconductor devices have replaced thermionic devices (vacuum tubes) in most …   Wikipedia

  • History of the transistor — Invention of the transistor= The first patent [patent|US|1745175|Julius Edgar Lilienfeld: Method and apparatus for controlling electric current first filed in Canada on 22.10.1925, describing a device similar to a MESFET] for the field effect… …   Wikipedia

  • GgNMOS — is an abbreviation for grounded gate NMOS. A ggNMOS is an electrostatic discharge (ESD) protection device used within CMOS integrated circuits (IC). The importance of using of such devices within ICs can been seen in the statistics reported by… …   Wikipedia

  • Zener diode — A Zener diode is a type of diode that permits current in the forward direction like a normal diode, but also in the reverse direction if the voltage is larger than the breakdown voltage known as Zener knee voltage or Zener voltage . The device… …   Wikipedia

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